Oxygen Incorporation in ZnTeO Alloys via Molecular Beam Epitaxy

Carbon incorporation in Si12yCy alloys grown by molecular beam epitaxy using a single silicon–graphite source

Pseudomorphic Si12yCy alloys on silicon ~100! were grown by molecular beam epitaxy using a single effusion source of silicon contained in a graphite crucible, producing carbon concentrations of y50.008. The behavior of carbon incorporation using this source was studied as a function of growth temperature using x-ray diffraction and infrared spectroscopy, and was compared to previous studies, wh...

Magnesium incorporation in GaN grown by molecular-beam epitaxy

A pronounced dependence of Mg incorporation on surface polarity was observed in a series of Mg step-doped epitaxial GaN layers grown by rf-plasma-assisted molecular-beam epitaxy. Incorporation was studied for both ~0001!, or Ga-polarity and (0001̄) or N-polarity orientations. Up to a factor of 30 times more Mg was incorporated in Ga-polarity layers under certain conditions, as determined by seco...

Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

In this study, we investigated phase separation and long-range atomic ordering phenomena in InGaN alloys produced by molecular beam epitaxy. Films grown at substrate temperatures of 700–750 °C with indium concentration higher than 35% showed phase separation, in good agreement with thermodynamic predictions for spinodal decomposition. Films grown at lower substrate temperatures ~650–675 °C! rev...

Effect of hydrogen in dilute InNxSb1Àx alloys grown by molecular beam epitaxy

Incorporation and optical activation of erbium in silicon using molecular beam epitaxy

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